NTD20N03L27T4G ON Semiconductor, NTD20N03L27T4G Datasheet - Page 5

• Manufacturer Part Number: NTD20N03L27T4G
• Description: MOSFET N-CH 30V 20A DPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD20N03L27T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 10A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 18.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 25V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.027Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD20N03L27T4GOSTR

L3
L4
b2
e
1
b3
4
2
E
3
b
D
A
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
DETAIL A
C
0.228
5.80
c
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
DPAK (SINGLE GAUGE)
ROTATED 90 CW
c2
DETAIL A
H
0.244
C
0.101
6.20
2.58
http://onsemi.com
L
CASE 369C−01
L1
ISSUE D
5
5
A1
0.118
H
3.0
0.063
1.6
C
SCALE 3:1
Z
SEATING
PLANE
6.172
0.243
NOTES:
inches
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
mm
STYLE 2:
Y14.5M, 1994.
MENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
DIM
PIN 1. GATE
A1
b2
b3
c2
L1
L2
L3
L4
A
D
H
b
c
E
e
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
0.090 BSC
0.020 BSC
−−−
0.108 REF
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
2.74 REF
0.51 BSC
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−