NTMFS4935NT3G ON Semiconductor, NTMFS4935NT3G Datasheet

NTMFS4935NT3G

Manufacturer Part Number

NTMFS4935NT3G

Description

MOSFET N-CH 30V 13A SO8 FL

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS4935NT3G.pdf (7 pages)

Specifications of NTMFS4935NT3G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

13A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

49.4nC @ 10V

Input Capacitance (ciss) @ Vds

4850pF @ 15V

Power - Max

930mW

Mounting Type

Surface Mount

Package / Case

5-DFN, SO8 FL

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4935NT3G

Manufacturer:

ON Semiconductor

Quantity:

3 350

Company:

H&T Electronics

Part Number:

NTMFS4935NT3G

Quantity:

210 000

Current page: 1 of 7
Download datasheet (116Kb)

NTMFS4935N

Power MOSFET

30 V, 93 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

September, 2010 − Rev. 6

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 s (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche

Energy T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery, DC−DC Converters

qJA

qJC

= 47 A

(Note 1)

≤ 10 s

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

≤

to Minimize Conduction Losses

Parameter

Steady

State

= 24 V, V

= 25°C, t

= 25 W

= 25°C unless otherwise stated)

= 10 V,

= 100°C

= 10 ms

= 25°C

= 85°C

= 25°C

Symbol

dV/d

Dmax

DSS

STG

−55 to

Value

+150

21.8

13.8

2.63

0.93

±20

275

100

110

260

8.7

8.2

Unit

V/ns

°C

†For information on tape and reel specifications,

NTMFS4935NT1G

NTMFS4935NT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SO−8 FLAT LEAD

(BR)DSS

CASE 488AA

30 V

(Note: Microdot may be in either location)

Device

STYLE 1

G (4)

ORDERING INFORMATION

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

N−CHANNEL MOSFET

4.2 mW @ 4.5 V

3.2 mW @ 10 V

D (5,6)

DS(ON)

(Pb−Free)

Package

SO−8 FL

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

NTMFS4935N/D

AYWWG

Tape & Reel

4935N

Shipping

1500 /

5000 /

93 A

MAX

†

Related parts for NTMFS4935NT3G

NTMFS4935NT3G Summary of contents

Page 1

... J T +150 STG Device dV/d 6 V/ns t NTMFS4935NT1G E 110 mJ AS NTMFS4935NT3G T 260 °C L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX DS(ON 4.5 V ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

4.0 V 160 3.8 V 140 4.5 3.6 V 120 3.4 V 100 ...

Page 5

C iss 3500 3000 2500 2000 C oss 1500 1000 500 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

Duty Cycle = 50% 100 20% 10 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal ...

Page 7

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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