2SJ598-Z-E1-AY Renesas Electronics America, 2SJ598-Z-E1-AY Datasheet - Page 5

• Manufacturer Part Number: 2SJ598-Z-E1-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E1-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
–100
–0.1
100
–10
80
60
40
20
–1
–0.1
0
0
T
Single Pulse
1000
0.01
FORWARD BIAS SAFE OPERATING AREA
C
100
0.1
10
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 25˚C
1
20
10
V
μ
DS
T
40
- Drain to Source Voltage - V
C
- Case Temperature -
–1
100
60
I
D(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
μ
80
1 m
100
–10
I
D(pulse)
A
120
˚C
= 25°C)
10 m
140
PW - Pulse Width - s
–100
Data Sheet D14656EJ5V0DS
160
100 m
1
30
25
20
15
10
5
0
0
10
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
40
C
- Case Temperature -
Single Pulse
100
60
80
1000
100
R
R
th(ch-C)
th(ch-A)
120
˚C
= 125˚C/W
= 5.43˚C/W
140
160
2SJ598
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