2SJ598-Z-E2-AY Renesas Electronics America, 2SJ598-Z-E2-AY Datasheet - Page 3

• Manufacturer Part Number: 2SJ598-Z-E2-AY
• Description: MOSFET P-CH 60V TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SJ598-Z-E2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. D14656EJ5V0DS00 (5th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
for solenoid, motor and lamp driver.
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
• Low on-state resistance:
• Low C
• Built-in gate protection diode
• TO-251/TO-252 package
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SJ598 is P-channel MOS Field Effect Transistor designed
R
R
DS(on)1
DS(on)2
2. Starting T
iss
= 130 mΩ MAX. (V
= 190 mΩ MAX. (V
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 720 pF TYP.
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
A
Note2
DS
C
GS
= 25°C)
= 25°C)
= 0 V)
GS
GS
= 0 V)
= –10 V, I
= –4.0 V, I
DD
The mark <R> shows major revised points.
P-CHANNEL POWER MOS FET
= –30 V, R
D
A
D
= –6 A)
= 25°C)
= –6 A)
I
D(pulse)
V
V
I
G
D(DC)
T
E
T
I
P
P
GSS
DATA SHEET
DSS
AS
stg
AS
= 25 Ω, V
ch
T
T
SWITCHING
–55 to +150
GS
14.4
MOS FIELD EFFECT TRANSISTOR
–60
m20
m12
m30
150
–12
1.0
23
= –20 → 0 V
mJ
°C
°C
W
W
V
V
A
A
A
ORDERING INFORMATION
PART NUMBER
2SJ598-Z
2SJ598
(TO-251)
(TO-252)
2SJ598
TO-252 (MP-3Z)
TO-251 (MP-3)
PACKAGE
2000, 2001