NTD20P06LT4G ON Semiconductor, NTD20P06LT4G Datasheet - Page 5
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NTD20P06LT4G
Manufacturer Part Number
NTD20P06LT4G
Description
MOSFET P-CH 60V 15.5A DPAK
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Specifications of NTD20P06LT4G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 7.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
17.5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15.5 A
Power Dissipation
65000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.15Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
15.5A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD20P06LT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
TDK
Quantity:
30 000
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD20P06LT4G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
100
0.01
0.1
10
0.1
1
1E−03
1
0.1
V
Single Pulse
T
GS
C
Single Pulse
Figure 11. Maximum Rated Forward Biased
= 25°C
= −15 V
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Safe Operating Area
1
1E−02
R
Thermal Limit
Package Limit
DS(on)
Limit
10
1E−01
Figure 13. Thermal Response
10 ms
http://onsemi.com
100
dc
t, TIME (s)
1
100
Normalized to R
Chip
5
1E+00
350
300
250
200
150
100
0.0154 F
50
0.0175
0
25
Figure 12. Maximum Avalanche Energy versus
qJA
T
J
, STARTING JUNCTION TEMPERATURE (°C)
at Steady State (1 in Pad)
0.0854 F 0.3074 F 1.7891 F
0.0710
Starting Junction Temperature
50
1E+01
0.2706
75
0.5776
1E+02
100
I
107.55 F
D
0.7086
= −15 A
125
Ambient
1E+03
150