NDF04N60ZG ON Semiconductor, NDF04N60ZG Datasheet

NDF04N60ZG

Manufacturer Part Number

NDF04N60ZG

Description

MOSFET N-CH 600V 4A TO-220FP

Manufacturer

ON Semiconductor

Datasheet

1.NDF04N60ZG.pdf (9 pages)

Specifications of NDF04N60ZG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2 Ohm @ 2A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

4.4A

Vgs(th) (max) @ Id

4.5V @ 50µA

Gate Charge (qg) @ Vgs

19nC @ 10V

Input Capacitance (ciss) @ Vds

535pF @ 25V

Power - Max

28W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.8 Ohms

Gate Charge Qg

19 nC

Forward Transconductance Gfs (max / Min)

3.3 S

Drain-source Breakdown Voltage

600 V

Continuous Drain Current

4.4 A

Power Dissipation

28 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NDF04N60Z, NDP04N60Z,

NDD04N60Z

N-Channel Power MOSFET

600 V, 1.8 W

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq

2. Limited by maximum junction temperature

3. I

ABSOLUTE MAXIMUM RATINGS

April, 2010 − Rev. 3

Drain−to−Source Voltage

Continuous Drain Current

Pulsed Drain Current,

Power Dissipation R

Gate−to−Source Voltage

Single Pulse Avalanche

ESD (HBM) (JESD22−A114)

RMS Isolation Voltage

Peak Diode Recovery

Continuous Source Current

Maximum Temperature for

Operating Junction and

Storage Temperature Range

Low ON Resistance

Low Gate Charge

100% Avalanche Tested

These Devices are Pb−Free and are RoHS Compliant

[2 oz] including traces).

(Note 1)

Energy, I

(t = 0.3 sec., R.H. ≤ 30%,

(Body Diode)

Soldering Leads

qJC

= 4.0 A, di/dt ≤ 100 A/ms, V

= 25°C) (Figure 15)

, T

@ 10V

Parameter

= 100°C

= 4.0 A

qJC

Symbol

dv/dt

, T

DSS

ISO

esd

≤ BV

stg

DSS

= 25°C unless otherwise noted)

(Note 2)

, T

4500

NDF

4.4

2.8

= +150°C

4.5 (Note 3)

−55 to 150

3000

600

±30

120

260

4.0

NDP

4.4

2.8

−

NDD

4.1

2.6

−

V/ns

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

CASE 221D

TO−220FP

STYLE 1

600 V

G (1)

DSS

ORDERING INFORMATION

CASE 221A

TO−220AB

STYLE 5

http://onsemi.com

N−Channel

D (2)

Publication Order Number:

CASE 369D

STYLE 2

DS(on)

IPAK

S (3)

1.8 Ω

(TYP) @ 2 A

NDF04N60Z/D

CASE 369AA

1 2

STYLE 2

DPAK

Related parts for NDF04N60ZG

NDF04N60ZG Summary of contents

Page 1

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 1.8 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Drain−to−Source Voltage ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS ...

Page 3

25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 3.5 3 2 (V) GS Figure 3. On−Resistance ...

Page 4

C iss 600 400 C oss 200 C rss 100 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 100 V = 300 ...

Page 5

... Figure 14. Thermal Impedance for NDD04N60Z Figure 15. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 0.001 ...

Page 6

... ORDERING INFORMATION Order Number NDF04N60ZG NDP04N60ZG NDD04N60Z−1G NDD04N60ZT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NDF04N60ZG or NDP04N60ZG AYWW Gate Source Drain Package TO−220FP (Pb−Free) TO−220AB (Pb− ...

Page 7

PACKAGE DIMENSIONS TO−220 FULLPAK −B− −Y− 0.25 (0.010 ...

Page 8

−T− SEATING K PLANE 0.13 (0.005) M PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE http://onsemi.com 8 NOTES: 1. DIMENSIONING AND ...

Page 9

... PL 0.13 (0.005) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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