NIF9N05CLT3G ON Semiconductor, NIF9N05CLT3G Datasheet - Page 5

• Manufacturer Part Number: NIF9N05CLT3G
• Description: MOSFET N-CH 52V 2.6A SOT223
• Manufacturer: ON Semiconductor

Specifications of NIF9N05CLT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 52V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 250pF @ 35V
• Power - Max: 1.69W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NIF9N05CLT3GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
NIF9N05CLT1
NIF9N05CLT1G
NIF9N05CLT3
NIF9N05CLT3G
100000
500
400
300
200
100
10000
1000
0
100
10
10
V
C
C
1
DS
iss
rss
V
I
V
Figure 9. Resistance Switching Time Variation
D
= 0 V
5
DD
GS
= 2.6 A
V
GS
= 40 V
= 10 V
Figure 7. Capacitance Variation
0
V
V
Device
GS
DS
R
5
= 0 V
G
vs. Gate Resistance
, GATE RESISTANCE (W)
10
10
15
t
t
d(off)
d(on)
t
t
f
r
20
TYPICAL PERFORMANCE CURVES
25
T
C
C
C
J
iss
rss
oss
= 25°C
30
http://onsemi.com
NIF9N05CL
35
100
(Pb−Free)
(Pb−Free)
SOT−223
SOT−223
SOT−223
SOT−223
Package
5
5
4
3
2
1
0
0
V
Q
DS
3
2
1
0
0.5
GS
Figure 8. Gate−to−Source Voltage vs. Total
Figure 10. Diode Forward Voltage vs. Current
V
T
V
1
J
GS
SD
Q
= 25°C
G
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.6
, TOTAL GATE CHARGE (nC)
2
Gate Charge
Q
Q
GD
T
0.7
1000 / Tape & Reel
4000 / Tape & Reel
3
Shipping
0.8
I
T
4
D
†
J
= 2.6 A
V
= 25°C
GS
0.9
5
40
30
0
50
20
10
1