NTD5802NT4G ON Semiconductor, NTD5802NT4G Datasheet
NTD5802NT4G
Specifications of NTD5802NT4G
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NTD5802NT4G Summary of contents
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NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK Features • Low R to Minimize Conduction Losses DS(on) • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • MSL 1/260°C • AEC Q101 ...
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THERMAL RESISTANCE MAXIMUM RATINGS Junction−to−Case (Drain) Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − Steady State (Note 2) 1. Surface−mounted on FR4 board using pad size Cu. 2. Surface−mounted on FR4 board using the minimum ...
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ELECTRICAL CHARACTERISTICS Parameter DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge (T = 25°C unless otherwise noted) J Symbol Test Condition 25° ...
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TYPICAL PERFORMANCE CHARACTERISTICS 200 180 160 140 T = 25°C J 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics ...
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TYPICAL PERFORMANCE CHARACTERISTICS 8000 C iss 7000 6000 5000 4000 3000 2000 C oss 1000 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 V ...
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... Single Pulse 0.01 0.00001 0.0001 ORDERING INFORMATION Order Number NTD5802NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.001 0.01 t, PULSE TIME (s) Figure 12. Thermal Response Package DPAK (Pb− ...
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... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...