NTMFS4898NFT3G ON Semiconductor, NTMFS4898NFT3G Datasheet - Page 3

• Manufacturer Part Number: NTMFS4898NFT3G
• Description: MOSFET N-CH 30V SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4898NFT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.2A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 49.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3233pF @ 12V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: SO-8FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 mOhms
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 117 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
200
180
160
140
120
100
80
60
40
20
0
0
10 V
0.5
Figure 1. On−Region Characteristics
V
7.5 V
DS
Parameter
1
, DRAIN−TO−SOURCE VOLTAGE (V)
1.5
V
2
GS
= 4.4 V
2.5
3
(T
J
T
= 25°C unless otherwise specified)
3.5
J
= 25°C
TYPICAL CHARACTERISTICS
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
4
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
G
http://onsemi.com
4.5
2.8 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
4.2 V
4.0 V
5
V
3
V
GS
I
V
S
GS
I
GS
D
= 2.0 A
= 0 V, dI
= 15 A, R
= 0 V,
Test Condition
= 10 V, V
160
140
120
100
80
60
40
20
T
I
0
S
A
1
= 30 A
= 25°C
S
/dt = 100 A/ms,
V
G
DS
DS
= 3.0 W
1.5
= 10 V
= 15 V,
V
Figure 2. Transfer Characteristics
T
T
GS
J
J
= 125°C
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
2
T
J
= 25°C
2.5
Min
T
J
= 125°C
3
17.8
37.3
0.38
0.31
26.7
13.7
13.0
0.65
0.20
Typ
11.3
17.3
5.6
1.5
1.4
3.5
T
J
Max
0.70
= −55°C
4
Unit
nH
ns
ns
nC
W
V
4.5