NTD2955-1G ON Semiconductor, NTD2955-1G Datasheet - Page 3
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NTD2955-1G
Manufacturer Part Number
NTD2955-1G
Description
MOSFET P-CH 60V 12A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD2955T4G.pdf
(8 pages)
Specifications of NTD2955-1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 25V
Power - Max
55W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.155 Ohms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 12 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD2955-1G
NTD2955-1GOS
NTD2955-1GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD2955-1G
Manufacturer:
ON Semiconductor
Quantity:
5
Company:
Part Number:
NTD2955-1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NTD2955-1G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25
20
15
10
- 50
5
0
0
0
0
0
Figure 3. On-Resistance versus Drain Current
T
V
V
I
J
D
= 25°C
GS
GS
-V
- 25
= -6 A
Figure 5. On-Resistance Variation with
1
Figure 1. On-Region Characteristics
3
DS
= -10 V
= -10 V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
T
2
J
0
, JUNCTION TEMPERATURE (°C)
-I
6
-9.5 V
D
, DRAIN CURRENT (AMPS)
3
TYPICAL PERFORMANCE CURVES
V
and Temperature
25
GS
9
Temperature
= -10 V
4
50
T
J
- 55°C
25°C
= 125°C
12
5
75
6
15
-9 V
100
7
18
125
NTD2955, NTD2955P
8
21
http://onsemi.com
150
-6.5 V
-5.5 V
-8 V
9
-5 V
-7 V
-6 V
175
24
10
3
(T
0.250
0.225
0.200
0.150
0.125
0.100
0.075
0.050
0.175
1000
100
J
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
= 25°C unless otherwise noted)
2
0
5
Figure 4. On-Resistance versus Drain Current
V
V
T
GS
DS
J
10
-V
-V
= 25°C
= 0 V
3
≥ -10 V
3
DS
Figure 6. Drain-To-Source Leakage
GS
Figure 2. Transfer Characteristics
15
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-I
4
6
20
D
Current versus Voltage
, DRAIN CURRENT (AMPS)
and Gate Voltage
25
5
V
9
GS
T
-15 V
30
J
= -10 V
T
100°C
= 125°C
J
25°C
12
6
= - 55°C
35
15
7
40
45
18
8
125°C
50
21
9
55
24
10
60