ZXMN6A25G Diodes Zetex, ZXMN6A25G Datasheet

MOSFET N-CHAN 60V SOT223

ZXMN6A25G

Manufacturer Part Number
ZXMN6A25G
Description
MOSFET N-CHAN 60V SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A25G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
20.4nC @ 10V
Input Capacitance (ciss) @ Vds
1063pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A25GTR
ZXMN6A25G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A25
Issue 2 - November 2006
© Zetex Semiconductors plc 2006
Device
ZXMN6A25GTA
Low on-resistance
Fast switching speed
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
V
(BR)DSS
60
0.070 @ V
0.050 @ V
Reel size
(inches)
R
DS(on)
7
GS
GS
( )
= 4.5V
= 10V
Tape width
(mm)
12
1
I
D
6.7
5.7
(A)
Quantity
per reel
1,000
D
Pinout - top view
www.zetex.com
G
S
D
D
G
S

Related parts for ZXMN6A25G

ZXMN6A25G Summary of contents

Page 1

... Low gate drive • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A25GTA 7 Device marking ZXMN 6A25 Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 6 4.5V 5.7 ...

Page 2

... Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ( 10V 25°C GS amb ( 10V 70°C GS amb ( 10V 25°C GS amb (b) (c) (a) (b) 10 sec. 2 ZXMN6A25G Symbol Limit Unit V 60 DSS V ± 6.7 D 5.4 4 mW/° ...

Page 3

... Typical characteristics Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25G 3 www.zetex.com ...

Page 4

... V 1 GS(th) R 0.050 DS(on) 0.070 g 10 1063 iss C 104 oss C 64 rss t 3.8 d(on 26.2 d(off 0. 21.4 rr 300 s; duty cycle 2%. 4 ZXMN6A25G Unit Conditions 250 60V =±20V 250 10V 3. 4.5V 3. 15V 4. 30V f=1MHz 30V ...

Page 5

... Typical characteristics Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25G 5 www.zetex.com ...

Page 6

... Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 2 - November 2006 © Zetex Semiconductors plc 2006 t t d(off (on) Switching time test circuit 6 ZXMN6A25G Current regulator 50k 12V Same as D.U D.U Gate charge test circuit www.zetex.com ...

Page 7

... Zetex Semiconductors plc 2006 Inches DIM Min Max - 0.071 e 0.0008 0.004 e1 0.026 0.033 E 0.114 0.122 E1 0.009 0.013 L 0.248 0.264 - 7 ZXMN6A25G Millimeters Inches Min Max Min 2.30 BSC 0.0905 BSC 4.60 BSC 0.181 BSC 6.70 7.30 0.264 3.30 3.70 0.130 0.90 - 0.355 - - - www.zetex.com Max ...

Page 8

... Fax: (49 Fax: (1) 631 360 8222 europe.sales@zetex.com usa.sales@zetex.com © 2006 Published by Zetex Semiconductors plc Issue 2 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25G Asia Pacific Corporate Headquarters Zetex (Asia Ltd) Zetex Semiconductors plc 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton Hing Fong Road, Kwai Fong ...

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