NTD25P03LG ON Semiconductor, NTD25P03LG Datasheet - Page 3

• Manufacturer Part Number: NTD25P03LG
• Description: MOSFET P-CH 30V 25A DPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD25P03LG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 1260pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 75000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.08Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD25P03LG; NTD25P03LGOS

0.25
0.15
0.05
50
40
30
20
10
0.3
0.2
0.1
0
1.6
1.4
1.2
0.8
0.6
0
0
1
−50
0
Figure 3. On−Resistance versus Drain Current
−V
V
5
GS
7 V
Figure 1. On−Region Characteristics
DS
−25
I
V
Figure 5. On−Resistance Variation with
D
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −5 V
GS
V
8 V
= −12.5
1
GS
10
9 V
T
= −5 V
J
−I
= 10 V
, JUNCTION TEMPERATURE (°C)
0
D
15
, DRAIN CURRENT (AMPS)
and Temperature
2
25
20
Temperature
T = 125°C
T = 25°C
T = −40°C
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
6 V
25
50
3
30
75
35
T
100
J
4
= 25°C
40
4.5 V
3.5 V
2.5 V
5 V
4 V
3 V
125
http://onsemi.com
45
5
150
50
3
10,000
0.075
0.025
1000
0.01
0.05
100
10
50
40
30
20
10
0
0
1
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
T
V
V
−V
−V
J
5
DS
GS
= 25°C
DS
GS
≥ −5 V
Figure 2. Transfer Characteristics
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
−I
D
15
, DRAIN CURRENT (AMPS)
10
and Gate Voltage
versus Voltage
T
T
20
J
3
J
V
= 150°C
= 125°C
V
GS
GS
25
15
= −5 V
= −10 V
T
J
30
= 25°C
4
T
20
J
35
= −40°C
40
T
5
J
25
= 125°C
45
30
50
6