IRF830S Vishay, IRF830S Datasheet - Page 6

• Manufacturer Part Number: IRF830S
• Description: MOSFET N-CH 500V 4.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF830S

IRF830S, SiHF830S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
91064_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
500
400
300
200
100
600
0
25
V
DD
Starting T
= 50 V
+
-
V
50
DD
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
2.0 A
2.8 A
4.5 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S-83030-Rev. A, 19-Jan-09
Document Number: 91064
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS