IRF840S Vishay, IRF840S Datasheet
IRF840S
Specifications of IRF840S
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IRF840S Summary of contents
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... 100 ° ° °C A for Ω 8.0 A (see fig. 12 ≤ 150 ° IRF840S, SiHF840S Vishay Siliconix device design, low on-resistance is a surface mount power package is suitable for high current applications 2 D PAK (TO-263 IRF840STRRPbF a a SiHF840STR- IRF840STR a a SiHF840STR ...
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... IRF840S, SiHF840S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... V Drain-to-Source Voltage ( 91071_02 Fig Typical Output Characteristics, T Document Number: 91071 S-81432-Rev. A, 07-Jul-08 4 µs Pulse Width °C C 91071_03 = 25 ° µs Pulse Width T = 150 °C C 91071_04 = 150 °C C IRF840S, SiHF840S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF840S, SiHF840S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 1000 500 Drain-to-Source Voltage ( 91071_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91071_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss rss 91071_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91071 S-81432-Rev. A, 07-Jul-08 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 IRF840S, SiHF840S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF840S, SiHF840S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (° ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF840S, SiHF840S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...