BS170 Diodes Inc, BS170 Datasheet
BS170
Manufacturer Part Number
BS170
Description
MOSFET N-CH 60V 300MA TO92-3
Manufacturer
Diodes Inc
Datasheet
1.BS170.pdf
(2 pages)
Specifications of BS170
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
830mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
BS170DI
BS170DITB
BS170DITB
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Features
Mechanical Data
·
·
·
·
Maximum Ratings
Inverse Diode
Electrical Characteristics
Notes:
DS21802 Rev. D-3
·
·
·
·
Maximum Forward Current (continuous)
Forward Voltage Drop (typ.) @ V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Cutoff Current
Drain-Source ON Resistance
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Turn On Time
Turn Off Time
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @T
Junction Temperature
Operating and Storage Temperature Range
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connection: See Diagram
Weight: 0.18 grams (approx.)
High Input Impedance
Fast Switching Speed
CMOS Logic Compatible Input
No Thermal Runaway or Secondary
Breakdown
1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.
Characteristic
C
= 25°C (Note 1)
@ T
Characteristic
Characteristic
@ T
A
= 25°C unless otherwise specified
GS
A
= 25°C unless otherwise specified
= 0, I
@ T
F
= 0.5A, T
A
= 25°C unless otherwise specified
j
= 25°C
V
Symbol
r
V
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
DS (ON)
(BR)DSS
I
R
I
C
GS(th)
g
GSS
DSS
t
t
qJA
on
off
FS
iss
1 of 2
Min
0.8
60
—
—
—
—
—
—
—
BOTTOM
Symbol
T
Symbol
E
VIEW
Typ
200
1.0
3.5
5.0
90
60
15
—
—
—
V
V
j
, T
V
DGS
P
V
DSS
I
T
I
GS
D
F
d
F
j
STG
H
S G D
Max
150
3.0
0.5
5.0
10
—
—
—
—
G
A
D
H
B
C
Unit
K/W
mm
nA
µA
pF
ns
-55 to +150
V
V
W
Value
Value
0.50
0.85
±20
300
830
150
60
60
I
V
V
V
V
V
V
V
R
D
Note 1
GS
GS
DS
GS
DS
DS
GS
D
= 100µA, V
= 100W
= 25V, V
= 10V, I
= 10V, V
= V
= 15V, V
= 10V, I
= 10V, V
All Dimensions in mm
Dim
Test Condition
DS
A
B
C
D
G
H
E
, I
BS170
D
D
D
GS
GS
DS
DS
GS
= 1.0mA
= 0.2A, f = 1MHz
= 0.2mA
TO-92
4.45
4.46
12.7
0.41
3.43
2.42
1.14
= 0
= 0
= 0, f =1.0MHz
= 10V,
Min
= 0
Unit
Unit
mW
mA
°C
°C
V
V
V
A
V
BS170
Max
4.70
4.70
0.63
3.68
2.67
1.40
—
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BS170 Summary of contents
Page 1
... Max Unit Test Condition I = 100µA, V — 1.0mA 3 15V 25V 0.5 µ 10V 0.2mA 5 Note 1 150 K/W — 10V 0.2A 1MHz 10V =1.0MHz — 10V 10V — 100W D Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Unit °C °C Unit BS170 ...
Page 2
... T = 25°C A Pulse test width 80µs; pulse duty factor GATE-SOURCE VOLTAGE (V) GS Fig. 4. Drain Current vs Gate-Source Voltage V DS Pulse test width 80µs; pulse duty factor 1% 300 100 200 400 DRAIN CURRENT (mA) D Fig. 6 Transconductance vs. Drain Current 100 = 10V 10 = 10V 500 BS170 ...