IRF530S Vishay, IRF530S Datasheet - Page 3

• Manufacturer Part Number: IRF530S
• Description: MOSFET N-CH 100V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF530S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF530S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91020
S-82996-Rev. A, 19-Jan-09
91020_01
91020_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
10
1
0
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS
DS ,
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
175 °C
1
1
C
C
= 175 °C
4.5 V
= 25 °C
4.5 V
91020_03
91020_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
Fig. 3 - Typical Transfer Characteristics
- 60- 40 - 20 0
4
I
V
D
GS
= 14 A
= 10 V
V
5
T
GS ,
J ,
IRF530S, SiHF530S
Junction Temperature (°C)
Gate-to-Source Voltage (V)
25
20 40 60 80 100 120 140 160
6
°
C
7
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
=
50 V
www.vishay.com
9
180
10
3