IRF840AS Vishay, IRF840AS Datasheet - Page 3

• Manufacturer Part Number: IRF840AS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840AS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
J
4.5V
10
4.5V
10
IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
°
°
100
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
10
1
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
Fig. 3 - Typical Transfer Characteristics
T = 150 C
I =
D
J
V
7.4A
8.0
5.0
GS
T , Junction Temperature ( C)
J
°
, Gate-to-Source Voltage (V)
0
T = 25 C
J
20 40
6.0
°
60
Vishay Siliconix
V
20µs PULSE WIDTH
7.0
80 100 120 140 160
DS
= 50V
V
°
GS
8.0
www.vishay.com
=
10V
9.0
3