IRF9620S Vishay, IRF9620S Datasheet

MOSFET P-CH 200V 3.5A D2PAK

IRF9620S

Manufacturer Part Number
IRF9620S
Description
MOSFET P-CH 200V 3.5A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9620S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9620S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9620S
Manufacturer:
IR
Quantity:
305
Company:
Part Number:
IRF9620STRLPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. I
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S09-0015-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Inductive Current, Clamp
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
G D
(nC)
(nC)
(V)
≤ - 3.5 A, dI/dt ≤ 95 A/µs, V
D
(Ω)
S
2
PAK (TO-263)
a
c
V
DD
GS
≤ V
= - 10 V
e
G
DS
, T
P-Channel MOSFET
e
Single
J
- 200
≤ 150 °C.
22
12
10
D
IRF9620SPbF
SiHF9620S-E3
IRF9620S
SiHF9620S
2
S
D
PAK (TO-263)
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
1.5
at - 10 V
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
I
I
P
, T
I
DM
LM
DS
GS
D
D
stg
IRF9620S, SiHF9620S
D
IRF9620STRLPbF
SiHF9620STL-E3
IRF9620STRL
SiHF9620STL
2
PAK (TO-263)
- 55 to + 150
LIMIT
0.025
- 200
a
300
a
± 20
- 3.5
- 2.0
0.32
- 5.0
- 14
- 14
3.0
40
a
Vishay Siliconix
d
a
www.vishay.com
UNIT
W/°C
V/ns
°C
W
V
A
A
1

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IRF9620S Summary of contents

Page 1

... typical surface mount application PAK (TO-263) IRF9620SPbF SiHF9620S-E3 IRF9620S SiHF9620S = 25 °C, unless otherwise noted ° 100 ° ° °C A for 10 s ≤ 150 ° IRF9620S, SiHF9620S Vishay Siliconix 2 D PAK (TO-263) a IRF9620STRLPbF a SiHF9620STL-E3 a IRF9620STRL a SiHF9620STL SYMBOL LIMIT V - 200 DS V ± 3 2 0.32 0.025 ...

Page 2

... IRF9620S, SiHF9620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... S09-0015-Rev. A, 19-Jan-09 80 µs Pulse Test - 91083_03 x R DS(on) max. D(on 91083_04 Single Pulse (Transient Thermal Impedence Square Wave Pulse Duration (s) 1 IRF9620S, SiHF9620S Vishay Siliconix - 5 80 µs Pulse Test 10 Drain-to-Source Voltage (V) DS Fig Typical Saturation Characteristics 2 10 Operation in this area limited 5 ...

Page 4

... IRF9620S, SiHF9620S Vishay Siliconix 4.0 80 µs Pulse Test V > max. DS D(on) DS(on) 3.2 2.4 1.6 0.8 0 Drain Current ( 91083_06 Fig Typical Transconductance vs. Drain Current - ° 150 C - 1.0 J ° 0.5 - 0.2 - 0.1 - 2.0 - 3.2 - 4 Source-to-Drain Voltage (V) 91083_07 SD Fig Typical Source-Drain Diode Forward Voltage 1 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature 100 T , Case Temperature (°C) 91083_14 C Fig Power vs. Temperature Derating Curve Document Number: 91083 S09-0015-Rev. A, 19-Jan- 125 150 120 140 IRF9620S, SiHF9620S Vishay Siliconix Vary t to obtain p required D.U. 0.05 Ω 0 0. Fig Clamped Inductive Test Circuit Fig ...

Page 6

... IRF9620S, SiHF9620S Vishay Siliconix Charge Fig. 18a - Basic Gate Charge Waveform Reverse recovery current Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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