IRF9Z14S Vishay, IRF9Z14S Datasheet - Page 3
![MOSFET P-CH 60V 6.7A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF9Z14S
Manufacturer Part Number
IRF9Z14S
Description
MOSFET P-CH 60V 6.7A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF9Z14S.pdf
(8 pages)
Specifications of IRF9Z14S
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9Z14S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF9Z14S
Manufacturer:
IR
Quantity:
5 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91089
S09-0071-Rev. A, 02-Feb-09
91089_01
91089_02
10
10
10
10
10
10
-1
-1
1
0
1
0
10
10
Bottom
Top
Bottom
-1
-1
Top
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
10
10
- 4.5 V
1
1
- 4.5 V
91089_03
91089_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
1
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 6.7 A
= - 10 V
- V
5
T
GS ,
25
J ,
Junction Temperature (°C)
°
Gate-to-Source Voltage (V)
C
6
7
175
Vishay Siliconix
°
20 µs Pulse Width
V
C
8
DS
= -
25 V
www.vishay.com
9
10
3