IRFBC40AS Vishay, IRFBC40AS Datasheet

IRFBC40AS

Manufacturer Part Number

IRFBC40AS

Description

MOSFET N-CH 600V 6.2A D2PAK

Manufacturer

Vishay

Datasheets

1.IRFBC40AS.pdf (8 pages)

2.IRFBC40AS.pdf (9 pages)

3.IRFBC40AS.pdf (10 pages)

Specifications of IRFBC40AS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.2 Ohm @ 3.7A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

6.2A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

42nC @ 10V

Input Capacitance (ciss) @ Vds

1036pF @ 25V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFBC40AS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFBC40AS

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRFBC40ASPBF

Quantity:

15 000

Company:

H&T Electronics

Part Number:

IRFBC40ASTRLPBF

Quantity:

70 000

Company:

H&T Electronics

Part Number:

IRFBC40ASTRRPBF

Quantity:

70 000

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Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

e. Uses IRFBC40A/SiHFBC40A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91113

S-Pending-Rev. A, 23-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

DS(on)

(Max.) (nC)

(nC)

(V)

G D

≤ 6.2 A, dI/dt ≤ 88 A/µs, V

(Ω)

PAK (TO-263)

= 25 °C, L = 29.6 mH, R

a, e

c, e

≤ V

IRFBC40ASPbF

SiHFBC40AS-E3

IRFBC40AS

SiHFBC40AS

= 10 V

PAK (TO-263)

= 25 Ω, I

, T

N-Channel MOSFET

Single

≤ 150 °C.

600

= 6.2 A (see fig. 12).

WORK-IN-PROGRESS

Power MOSFET

= 25 °C, unless otherwise noted

1.2

at 10 V

for 10 s

= 25 °C

IRFBC40ASTRLPbF

SiHFBC40ASTL-E3

IRFBC40ASTRL

SiHFBC40ASTL

= 100 °C

= 25 °C

FEATURES

• Low Gate Charge Q

• Improved Gate, Avalanche and Dynamic dV/dt

• Fully

• Effective C

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Forward

PAK (TO-263)

Requirement

Ruggedness

Avalanche Voltage and Current

IRFBC40AS, SiHFBC40AS

Characterized

SYMBOL

dV/dt

oss

, T

stg

Specified

results in Simple Drive

Capacitance

- 55 to + 150

IRFBC40ASTRRPbF

SiHFBC40ASTR-E3

IRFBC40ASTRR

SiHFBC40ASTR

LIMIT

300

± 30

PAK (TO-263)

600

570

125

6.2

3.9

1.0

6.2

6.0

Vishay Siliconix

and

www.vishay.com

UNIT

W/°C

RoHS*

COMPLIANT

V/ns

°C

Available

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