IRFS11N50A Vishay, IRFS11N50A Datasheet

MOSFET N-CH 500V 11A D2PAK

IRFS11N50A

Manufacturer Part Number
IRFS11N50A
Description
MOSFET N-CH 500V 11A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFS11N50A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1423pF @ 25V
Power - Max
170W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFS11N50A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS11N50A
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFS11N50APBF
Quantity:
1 000
Company:
Part Number:
IRFS11N50APBF
Quantity:
70 000
Company:
Part Number:
IRFS11N50ATRRP
Quantity:
3 200
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91286
S10-2326-Rev. B, 18-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
G D
(V)
(nC)
 11 A, dI/dt  140 A/μs, V
()
D
S
2
PAK (TO-263)
J
= 25 °C, L = 4.5 mH, R
a
c
a
a
b
DD
V
GS
 V
g
= 10 V
= 25 , I
DS
G
, T
N-Channel MOSFET
J
D
SiHFS11N50A-GE3
IRFS11N50APbF
SiHFS11N50A-E3
IRFS11N50A
SiHFS11N50A
Single
 150 °C.
2
500
52
13
18
PAK (TO-263)
AS
= 11 A (see fig. 12).
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.52
GS
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
Definition
Requirement
Ruggedness
and Current
D
SiHFS11N50ATRR-GE3
IRFS11N50ATRRPbF
SiHFS11N50ATR-E3
-
-
2
PAK (TO-263)
IRFS11N50A, SiHFS11N50A
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
, T
P
DM
I
AR
GS
DS
AS
AR
D
D
stg
Specified
a
a
g
a
results in Simple Drive
- 55 to + 150
LIMIT
D
SiHFS11N50ATRL-GE3
IRFS11N50ATRLPbF
SiHFS11N50ATL-E3
IRFS11N50ATRL
SiHFS11N50ATL
300
± 30
500
275
170
7.0
1.3
6.9
11
44
11
17
2
PAK (TO-263)
Vishay Siliconix
d
www.vishay.com
a
a
a
UNIT
W/°C
a
V/ns
mJ
mJ
°C
W
V
A
A
a
1

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IRFS11N50A Summary of contents

Page 1

... SiHFS11N50A-E3 SiHFS11N50ATR-E3 IRFS11N50A - SiHFS11N50A - = 25 °C, unless otherwise noted ° 100 ° °C C for (see fig. 12). AS  150 ° IRFS11N50A, SiHFS11N50A Vishay Siliconix results in Simple Drive g Specified oss 2 D PAK (TO-263) a SiHFS11N50ATRL-GE3 a IRFS11N50ATRLPbF a SiHFS11N50ATL-E3 IRFS11N50ATRL SiHFS11N50ATL SYMBOL LIMIT 500 V DS ± ...

Page 2

... IRFS11N50A, SiHFS11N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Case (Drain) Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91286 S10-2326-Rev. B, 18-Oct-10 IRFS11N50A, SiHFS11N50A Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFS11N50A, SiHFS11N50A Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91286 S10-2326-Rev. B, 18-Oct-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91286 S10-2326-Rev. B, 18-Oct-10 IRFS11N50A, SiHFS11N50A 15 V Driver + - Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ ...

Page 6

... IRFS11N50A, SiHFS11N50A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91286. Document Number: 91286 S10-2326-Rev. B, 18-Oct-10 IRFS11N50A, SiHFS11N50A Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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