IRF820AS Vishay, IRF820AS Datasheet - Page 6

• Manufacturer Part Number: IRF820AS
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF820AS

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
9105 8 _12c
300
250
200
150
100
10 V
50
0
V
25
G
Starting T
Q
GS
50
J
Charge
, Junction Temperature (°C)
Q
Q
GD
G
75
100
Top
Bottom
125
1.1 A
1.6 A
2.5 A
I
D
150
91058_12d
700
650
600
550
Fig. 12d - Basic Gate Charge Waveform
12 V
V
Fig. 13b - Gate Charge Test Circuit
0.0
GS
Same type as D.U.T.
Current regulator
0.2 µF
0.5
I
AV
Current sampling resistors
3 mA
50 kΩ
, Avalanche Current (A)
0.3 µF
1.0
I
G
S-83030-Rev. A, 19-Jan-09
Document Number: 91058
D.U.T.
1.5
I
D
+
-
V
2.0
DS
2.5