IRF840LCS Vishay, IRF840LCS Datasheet - Page 4

• Manufacturer Part Number: IRF840LCS
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840LCS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840LCS

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91068_05
91068_06
1200
2400
1600
2000
800
400
20
16
12
0
8
4
0
10
0
I
0
D
= 8.0 A
V
8
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
16
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
24
= 250 V
= C
= 0 V, f = 1 MHz
= C
= C
C
C
C
10
V
gs
gd
ds
iss
oss
rss
1
DS
+ C
+ C
32
= 400 V
gd
gd
For test circuit
see figure 13
, C
ds
40
Shorted
48
91068_07
91068_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
Fig. 8 - Maximum Safe Operating Area
10
1
3
0
5
2
5
2
5
2
5
2
1
2
0.6
1
150
2
°
V
V
C
SD
DS
0.8
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
25
°
C
10
T
T
Single Pulse
1.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
S09-0071-Rev. A, 02-Feb-09
Document Number: 91068
5
1.2
10
2
2
1.4
V
GS
= 0 V
5
10
100
1
10
ms
10
1.6
µs
ms
µs
3