IRFBC20S Vishay, IRFBC20S Datasheet

MOSFET N-CH 600V 2.2A D2PAK

IRFBC20S

Manufacturer Part Number
IRFBC20S
Description
MOSFET N-CH 600V 2.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFBC20S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.4 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBC20S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFBC20S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRFBC20S
Manufacturer:
IR
Quantity:
12 500
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRFBC20, SiHFBC20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91107
S09-0045-Rev. A, 19-Jan-09
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
2
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 2.2 A, dI/dt ≤ 40 A/µs, V
= 50 V, starting T
(TO-262)
(Ω)
G
D
S
a
G
a, e
D
J
D
2
PAK (TO-263)
= 25 °C, L = 31 mH, R
e
S
c, e
a
DD
b, e
V
≤ V
GS
D
IRFBC20SPbF
SiHFBC20S-E3
IRFBC20S
SiHFBC20S
= 10 V
DS
2
PAK (TO-263)
, T
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
G
J
Single
≤ 150 °C.
600
N-Channel MOSFET
3.0
8.9
18
G
= 25 Ω, I
C
Power MOSFET
D
S
= 25 °C, unless otherwise noted
V
4.4
GS
AS
at 10 V
= 2.2 A (see fig. 12).
T
T
for 10 s
A
C
= 25 °C
= 25 °C
T
T
C
C
D
IRFBC20STRLPbF
SiHFBC20STL-E3
IRFBC20STRL
SiHFBC20STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount (IRFBC20S, SiHFBC20S)
• Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)
• Available in Tape and Reel (IRFBC20, SiiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
the accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L, SiHFBC20L) is a available
for low-profile applications.
PAK (TO-263)
2
PAK is suitable for high current applications because of its
2
PAK is a surface mount power package capable of
power
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
a
DS
GS
AS
AR
D
D
a
stg
capability
design,
- 55 to + 150
I
IRFBC20LPbF
SiHFBC20L-E3
IRFBC20L
SiHFBC20L
and
2
PAK (TO-262)
LIMIT
300
± 20
0.40
600
2.2
1.4
8.0
2.2
5.0
3.1
3.0
84
50
low
Vishay Siliconix
d
the
on-resistance
lowest
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
possible
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFBC20S Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91107 S09-0045-Rev. A, 19-Jan-09 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Power MOSFET FEATURES • Surface Mount (IRFBC20S, SiHFBC20S) 600 • Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) • Available in Tape and Reel (IRFBC20, SiiHFBC20S) 4.4 • Dynamic dV/dt Rating 18 • ...

Page 2

... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91107 S09-0045-Rev. A, 19-Jan-09 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L = 25 ° 150 °C C Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91107 S09-0045-Rev. A, 19-Jan-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91107 S09-0045-Rev. A, 19-Jan-09 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...

Page 6

... IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91107 S09-0045-Rev ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91107. Document Number: 91107 S09-0045-Rev. A, 19-Jan-09 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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