IRF840LCL Vishay, IRF840LCL Datasheet - Page 5

• Manufacturer Part Number: IRF840LCL
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840LCL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840LCL

Document Number: 91068
S09-0071-Rev. A, 02-Feb-09
91068_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
8.0
6.0
4.0
2.0
0.0
91068_11
R
25
20 V
G
V
DS
10
0.1
t
10
p
-2
1
10
50
T
-5
C
I
D = 0.5
0.2
0.1
0.05
0.02
0.01
AS
, Case Temperature (°C)
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
10
100
-4
15 V
Single Pulse
(Thermal Response)
Driver
125
+
- V
DD
A
10
150
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
D.U.T.
P
DM
DM
Vishay Siliconix
R
D
x Z
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
2
+ T
t
f
+
-
C
10
www.vishay.com
V
DD
5