IRF640STRR Vishay, IRF640STRR Datasheet - Page 5

• Manufacturer Part Number: IRF640STRR
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: Vishay

Specifications of IRF640STRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 91037
S-81241-Rev. A, 07-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
R
20 V
G
V
DS
t
p
I
AS
D.U.T.
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
Driver
+
- V
DD
A
IRF640S, IRF640L, SiHF640S, SiHF640L
Fig. 12b - Unclamped Inductive Waveforms
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
DD
5