IRF734S Vishay, IRF734S Datasheet - Page 4

• Manufacturer Part Number: IRF734S
• Description: MOSFET N-CH 450V 4.9A D2PAK
• Manufacturer: Vishay

Specifications of IRF734S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF734, SiHF734
Vishay Siliconix
www.vishay.com
4
91049_05
91049_06
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1400
1200
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 4.9 A
V
DS ,
10
Q
Drain-to-Source Voltage (V)
G
V
, Total Gate Charge (nC)
DS
= 90 V
V
20
DS
V
C
C
C
GS
iss
rss
oss
= 225 V
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
C
C
C
10
gs
gd
ds
iss
oss
rss
= 360 V
30
1
+ C
+ C
gd
gd
, C
For test circuit
see figure 13
ds
40
Shorted
50
91049_07
91049_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
1
0
2
1
5
2
5
2
5
2
0.5
1
Fig. 8 - Maximum Safe Operating Area
2
150
V
V
SD
DS
0.7
Operation in this area limited
°
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
C
10
T
T
Single Pulse
0.9
C
J
by R
= 150 °C
= 25 °C
2
25
DS(on)
°
C
5
1.1
S-82998-Rev. A, 12-Jan-08
Document Number: 91049
10
2
2
1.3
V
GS
= 0 V
10
100
1
10
5
ms
µs
ms
1.5
10
µs
3