IRF644N Vishay, IRF644N Datasheet - Page 7
![MOSFET N-CH 250V 14A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF644N
Manufacturer Part Number
IRF644N
Description
MOSFET N-CH 250V 14A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF644NS.pdf
(8 pages)
Specifications of IRF644N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF644N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF644N
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF644NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF644NSPBF
Manufacturer:
IR
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91038.
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
V
Fig. 13a - Basic Gate Charge Waveform
GS
V
G
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
R
-
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices and 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Fig. 14 - For N-Channel
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
12 V
Fig. 13b - Gate Charge Test Circuit
V
V
V
I
SD
GS
DD
GS
Same type as D.U.T.
Current regulator
= 10 V*
+
-
V
0.2 µF
DD
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Vishay Siliconix
D.U.T.
I
D
+
-
V
www.vishay.com
DS
7