IRFZ44RSTRR Vishay, IRFZ44RSTRR Datasheet - Page 5

• Manufacturer Part Number: IRFZ44RSTRR
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFZ44RSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
60
50
40
30
20
10
0.1
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
10
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
Case Temperature
T , Case Temperature ( C)
C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

L IMITED BY PACKAGE
75

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
0.001
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.01
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
90%
90%
10%
10%
V
V
DS
DS
GS
GS
R
R
Pulse Width
Pulse Width
Duty Factor
Duty Factor
G
G

10V
10V
V
V
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
d(on)
d(on)
Notes:
0.1
V
V
DS
DS
t
t
µs
µs
r
r
J
DM
D.U.T.
D.U.T.
x Z
1

IRFZ44R
thJC
P
2
1
DM
R
+ T
D
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
V
+
-
DD
10
5