IRF744PBF Vishay, IRF744PBF Datasheet - Page 5

• Manufacturer Part Number: IRF744PBF
• Description: MOSFET N-CH 450V 8.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF744PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF744PBF

Document Number: 91056
S-83029-Rev. A, 19-Jan-09
91056_09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
10
to obtain
Fig. 12a - Unclamped Inductive Test Circuit
8
6
4
2
0
AS
25
91056_11
R
10 V
G
10
0.1
10
V
50
-2
1
T
DS
10
C
, Case Temperature (°C)
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
t
p
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T
0.01 Ω
L
100
10
-4
Single Pulse
(Thermal Response)
125
+
150
-
10
V
t
-3
1
DD
, Rectangular Pulse Duration (s)
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
DS
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
IRF744, SiHF744
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
+ T
2
t
f
V
+
-
C
10
www.vishay.com
V
DD
DD
5