DMN5L06-7 Diodes Inc, DMN5L06-7 Datasheet - Page 3

• Manufacturer Part Number: DMN5L06-7
• Description: MOSFET N-CH 50V 280MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of DMN5L06-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: DMN5L06DITR

DMN5L06
Document number: DS30614 Rev. 4 - 2
300
200
500
400
100
0
-50
Fig. 7
T , AMBIENT TEMPERATURE ( C)
T , CHANNEL TEMPERATURE ( C)
A
R
ch
Static Drain-Source On-State Resistance
Fig. 11 Derating Curve - Total
θJA
0
= 357°C/W
vs. Channel Temperature
50
100
°
°
150
1
www.diodes.com
3 of 4
Fig.10 Forward Transfer Admittance vs. Drain Current
V
Pulsed
GS
= 0V
I , DRAIN CURRENT (A)
D
T = 150 C
A
T = -55 C
A
°
°
T = -25 C
A
T = 25 C
A
T = 85 C
A
°
T = 125 C
°
A
°
DMN5L06
© Diodes Incorporated
°
October 2007
1