SI5482DU-T1-E3 Vishay, SI5482DU-T1-E3 Datasheet
SI5482DU-T1-E3
Specifications of SI5482DU-T1-E3
Related parts for SI5482DU-T1-E3
SI5482DU-T1-E3 Summary of contents
Page 1
... Bottom View Ordering Information: Si5482DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...
Page 2
... Si5482DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
Page 3
... On-Resistance vs. Drain Current and Gate Voltage 11 Total Gate Charge (nC) g Gate Charge Document Number: 73594 S-81448-Rev. B, 23-Jun- 2.0 2.5 3 Si5482DU Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 2500 2000 C iss 1500 1000 500 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
Page 4
... Si5482DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.4 1.2 1.0 0.8 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.040 0.035 0.030 0.025 0.020 °C J 0.015 0.010 0.8 1.0 1 ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73594 S-81448-Rev. B, 23-Jun-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si5482DU Vishay Siliconix ...
Page 6
... Si5482DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... BSC 0.20 0. 0.35 0.40 Package Information Vishay Siliconix A 1 DETAIL Z INCHES MIN. NOM. MAX. 0.028 0.030 0.033 0 - 0.002 0.010 0.012 0.014 0.006 0.008 0.010 0.115 0.118 0.121 ...
Page 8
... Package Information Vishay Siliconix ® ® PowerPAK ChipFET DUAL PAD D D1 (8) D1 (7) D2 (6) SI (1) GI ( (1) GI ( ( Backside view of dual pad DIM. MIN 0.25 C 0.15 D 2. 1. 0.15 K 0. 0.30 ECN: C10-0618-Rev. C, 19-Jul-09 DWG: 5940 www ...
Page 9
... Revision: 21-Jan-08 ® ® ChipFET Single 0.350 (0.014) 0.650 0.300 (0.026) (0.012) 1.870 (0.074) 2.575 (0.101) Recommended Minimum Pads Dimensions in mm/(Inches) Application Note 826 Vishay Siliconix 0.300 (0.012) 0.100 (0.004) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 0.305 (0.012) www.vishay.com 9 ...
Page 10
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...