SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

www.vishay.com
8
Si5858DU
Vishay Siliconix
0.0001
0.001
100.0
10.0
0.01
1.0
0.1
–50
Reverse Current vs. Junction Temperature
–25
T
J
0
– Junction Temperature (_C)
20 V
25
10 V
50
75
600
500
400
300
200
100
0
0
100
_
125
4
V
150
KA
New Product
– Reverse Voltage (V)
Capacitance
8
12
0.1
10
16
1
0
0.1
20
V
F
– Forward Voltage Drop (V)
Forward Voltage Drop
T
J
0.2
= 150_C
0.3
S–51931—Rev. A, 12-Sep-05
Document Number: 73460
0.4
T
J
= 25_C
0.5
0.6