PSMN005-55B,118 NXP Semiconductors, PSMN005-55B,118 Datasheet - Page 9

• Manufacturer Part Number: PSMN005-55B,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-55B,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055637118; PSMN005-55B /T3; PSMN005-55B /T3

Philips Semiconductors
October 1999
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
N-channel logic level TrenchMOS
discharge during transport or handling.
Fig.17. SOT404 surface mounting package. Centre pin connected to mounting base.
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
(TM)
E
3
0
b
2.54
e
scale
EIAJ
9
transistor
2.5
2.90
2.10
L p
5 mm
15.40
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
c
EUROPEAN
A
ISSUE DATE
98-12-14
99-06-25
PSMN005-55B;
SOT404
PSMN005-55P
Product specification
Rev 1.200