IRLR3103 International Rectifier, IRLR3103 Datasheet - Page 4

MOSFET N-CH 30V 55A DPAK

IRLR3103

Manufacturer Part Number
IRLR3103
Description
MOSFET N-CH 30V 55A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR3103

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR3103

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IRLR/U3103
4
1 0 0 0
3200
2800
2400
2000
1600
1200
1 0 0
800
400
1 0
0
0.4
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
T = 175°C
J
C
C
C
V
0.8
V
Drain-to-Source Voltage
iss
o s s
rs s
S D
D S
Forward Voltage
, S ource-to-D rain V oltage (V )
V
C
C
C
, D rain-to-S ource V oltage (V )
G S
is s
rs s
oss
T = 25°C
1.2
J
= 0V ,
= C
= C
= C
gs
ds
gd
1.6
+ C
+ C
10
gd
gd
f = 1M H z
, C
2.0
ds
S H O R TE D
V
2.4
G S
= 0V
2.8
100
A
A
1000
100
10
15
12
1
Fig 8. Maximum Safe Operating Area
9
6
3
0
1
0
T
T
S ingle P ulse
Fig 6. Typical Gate Charge Vs.
I
C
J
D
= 34A
= 25°C
= 175°C
O P E R A TIO N IN TH IS A R E A LIM ITE D
Gate-to-Source Voltage
10
V
D S
Q , T otal G ate C harge (nC )
G
, D rain-to-S ource V oltage (V )
20
B Y R
30
10
V
V
D S (on)
D S
D S
40
= 24V
= 15V
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
www.irf.com
50
10µ s
100µ s
1m s
10m s
60
100
70
A
A

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