IRFP140N International Rectifier, IRFP140N Datasheet - Page 2

• Manufacturer Part Number: IRFP140N
• Description: MOSFET N-CH 100V 33A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP140N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 52 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP140N

IRFP140N
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
I
I
I
I
V
t
Q
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
L
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
V
D
fs
(BR)DSS
GS(th)
S
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
R
2
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
AS
= 16A. (See Figure 12)
J
= 25°C, L = 2.0mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
Uses IRF540N data and test conditions.
T
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
SD
–––
–––
–––
–––
11
–––
–––
J
175°C
16A, di/dt
1400 –––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
330
–––
–––
170
––– 0.052
–––
––– -100
170
8.2
1.1
5.0
39
44
33
13
–––
110
–––
–––
–––
250
–––
–––
250
100
–––
–––
–––
–––
300µs; duty cycle
4.0
–––
–––
1.3
1.6
25
94
43
33
15
210A/µs, V
V/°C
µA
nA
nC
nH
µC
ns
pF
ns
V
S
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
R
ƒ = 1.0MHz, See Fig. 5
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 16A
= 16A
= 25°C, I
= 25°C, I
= 3.0
= 5.1
= V
= 50V, I
= 100V, V
= 80V, V
= 80V
= 50V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 0V
V
2%.
(BR)DSS
GS
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
GS
Conditions
= 16A, V
= 16A
= 250µA
= 16A
,
= 16A
GS
= 0V, T
= 0V
D
GS
= 1mA
J
= 150°C
= 0V
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G
G
S
D
D
S