IRF7421D1 International Rectifier, IRF7421D1 Datasheet

MOSFET N-CH 30V 5.8A 8-SOIC

IRF7421D1

Manufacturer Part Number
IRF7421D1
Description
MOSFET N-CH 30V 5.8A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7421D1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
35 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7421D1

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Description
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
À
Á
Â
Ã
www.irf.com
l
l
l
l
The FETKY
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Applications
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec
Co-packaged HEXFET
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Generation V Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
≤ 4.1A, di/dt ≤ 110A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
TM
family of co-packaged HEXFETs and Schottky diodes offer
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation Ã
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
Junction-to-Ambient
DD
®
≤ V
Power
(BR)DSS
A
, T
= 25°C unless otherwise noted)
J
≤ 150°C
Ã
GS
G
A
S
S
@10VÃ
1
2
3
4
FETKY
Top View
ä
8
7
6
5
MOSFET / Schottky Diode
-55 to +150
Maximum
D
D
D
D
A
IRF7421D1
A
± 20
-5.0
Maximum
5.8
4.6
2.0
1.3
46
16
62.5
Schottky Vf = 0.39V
R
DS(on)
V
DSS
PD- 91411D
SO-8
= 0.035Ω
= 30V
Units
°C/W
Units
W/°C
V/ns
°C
W
A
V
10/18/04
1

Related parts for IRF7421D1

IRF7421D1 Summary of contents

Page 1

... Surface mounted on FR-4 board, t ≤ 10sec www.irf.com FETKY Power Top View = 25°C unless otherwise noted) A @10VÃ GS Ã ≤ 150° (BR)DSS J PD- 91411D IRF7421D1 ä MOSFET / Schottky Diode 30V DSS 0.035Ω DS(on Schottky Vf = 0.39V SO-8 Maximum Units 5 ...

Page 2

... IRF7421D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Power Mosfet Characteristics 100 10 20µs PULSE WIDTH T = 25° 100 T = 150° 10V DS 20µs PULSE WIDTH A 5.0 5.5 6.0 IRF7421D1 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WIDTH T = 150° 0 Drain-to-Source Voltage (V) ...

Page 4

... IRF7421D1 2 4.1A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature . 5 Gate-to-Source oltage ( ) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 Power Mosfet Characteristics . 10V 100 120 140 160 Fig 6. Typical On-Resistance Vs. Drain 100 Single Pulse 0 0.1 Fig 8. Maximum Safe Operating Area VGS = 4 ...

Page 5

... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Power Mosfet Characteristics SHORTED 100 0 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7421D1 = 4. 24V 15V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC Notes: 1. Duty factor ...

Page 6

... IRF7421D1 Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteris- tics 150° 125° 25°C J 1000 0.8 1.0 (V) FM Fig.14 - Typical Junction Capacitance Vs 50°C J 25°C 00°C 75°C 50°C 25°C ...

Page 7

... SO-8 (Fetky) Part Marking Information EXA M PLE: THIS IRF7807D1 (FETKY) INTERNA TIONA L www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] 807D1 RECTIFIER LOG O IRF7421D1 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b ...

Page 8

... IRF7421D1 SO-8 (Fetky) Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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