IRFZ44NS International Rectifier, IRFZ44NS Datasheet - Page 2

• Manufacturer Part Number: IRFZ44NS
• Description: MOSFET N-CH 55V 49A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1470pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ44NS

Source-Drain Ratings and Characteristics
IRFZ44NS/IRFZ44NL

Electrical Characteristics @ T
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
‚
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
V
t
Q
t
DSS
GSS
S
on
d(on)
d(off)
f
SM
rr
r
For recommended footprint and soldering techniques refer to application note #AN-994.
V
fs
S
(BR)DSS
GS(th)
AS
SD
DS(on)
gd
iss
oss
rss
g
gs
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
2
max. junction temperature. (See fig. 11)
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.48mH
AS
= 25A. (See Figure 12)
Parameter

Parameter
J
= 25°C (unless otherwise specified)
‚
ƒ
„
…
†
I
This is a calculated value limited to T
T
Pulse width
This is a typical value at device destruction and represents
operation outside rated limits.
SD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 530… 150†
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
55
19
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
25A, di/dt
0.058 –––
1470 –––
–––
––– 17.5
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
360
–––
–––
–––
170
7.5
12
60
44
45
88
63
260
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
1.3
160
95
400µs; duty cycle
25
63
14
23
49
230A/µs, V
V/°C
m
nC
nH
mJ
nC
µA
nA
ns
pF
ns
V
V
S
A
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
integral reverse
DD
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 25A
= 25A
= 25°C, I
= 25°C, I
= 25A, L = 0.47mH
= 12
= 0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 0V
= 25V
= 10V, I
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
V
(BR)DSS
2%.
GS
J
, I
= 175°C .
D
S
F
D
D
D
= 250µA
GS
GS
Conditions
= 25A, V
= 25A
Conditions
= 250µA
,
= 25A „
= 25A„
„
= 0V
= 0V, T
D
www.irf.com
GS
= 1mA
J
= 150°C
= 0V
G
„
S
+L
D
S
D
)