IRF7463 International Rectifier, IRF7463 Datasheet - Page 2

• Manufacturer Part Number: IRF7463
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7463

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3150pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7463

Diode Characteristics
Static @ T
IRF7463
Avalanche Characteristics
V
∆V
V
Symbol
I
I
t
Q
t
Q
V
R
I
I
Dynamic @ T
Symbol
E
I
SM
S
rr
rr
DSS
GSS
AR
(BR)DSS
GS(th)
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
SD
rr
rr
DS(on)
AS
d(on)
r
d(off)
f
(BR)DSS
2
fs
iss
oss
rss
g
gs
gd
oss
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Leakage Current
Diode Forward Voltage
Static Drain-to-Source On-Resistance
J
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
0.6
30
Min. Typ. Max. Units
–––
–––
––– 0.52
––– 0.44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
41
0.029
Typ.
10.5
–––
–––
–––
–––
–––
–––
–––
–––
6.0
7.0
65
80
45
50
3150 –––
1070 –––
–––
138
180
7.6
6.5
34
12
21
16
28
–––
100
120
1.3
110
Max. Units
70
75
–––
-200
2.3
–––
100
200
11.4
8.0
9.5
2.0
–––
–––
–––
–––
–––
–––
20
20
51
18
32
µA
nA
nC
nC
V/°C
mΩ
ns
ns
V
V
V
nC
ns
pF
Typ.
S
–––
–––
V
V
V
V
V
V
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
Reference to 25°C, I
J
J
J
J
GS
GS
GS
GS
DS
DS
DS
GS
GS
V
I
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
DS
DS
GS
GS
DD
GS
GS
DS
G
= 11A
= 11A
= V
= 24V, V
= 24V, V
= 0V, I
= 10V, I
= 4.5V, I
= 2.7V, I
= 12V
= -12V
= 1.8Ω
= 24V, I
= 15V
= 15V
= 15V
= 4.5V
= 0V, V
= 4.5V
= 0V
GS
, I
D
S
F
D
D
Conditions
D
= 250µA
D
S
F
GS
GS
Conditions
ƒ
ƒ
= 11A, V
= 11A, V
DS
= 250µA
D
= 14A
= 7.0A
= 11A, V
= 11A
Conditions
= 11A, V
= 11A
Max.
= 0V, T
= 0V
= 15V
320
ƒ
ƒ
14
D
www.irf.com
GS
R
ƒ
ƒ
= 1mA
ƒ
GS
=15V
R
J
=15V
= 125°C
= 0V
G
= 0V
Units
ƒ
mJ
ƒ
A
D
S