IRF7807 International Rectifier, IRF7807 Datasheet - Page 6
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807
Manufacturer Part Number
IRF7807
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7807.pdf
(8 pages)
Specifications of IRF7807
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7807
Manufacturer:
IR
Quantity:
20 000
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Part Number:
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Manufacturer:
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831
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Manufacturer:
IR
Quantity:
20 000
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Part Number:
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Manufacturer:
IR
Quantity:
20 000
IRF7807/IRF7807A
6
Figure 11. Typical Source-Drain Diode Forward Voltage
100
0.1
10
1
0.001
0.1
10
1
0.4
D = 0.50
0.20
0.10
0.05
0.02
0.01
T = 150 C
J
V
SD
0.5
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
,Source-to-Drain Voltage (V)
°
(THERMAL RESPONSE)
IRF7807
0.01
SINGLE PULSE
0.6
0.7
T = 25 C
J
0.1
V
t , Rectangular Pulse Duration (sec)
0.8
1
GS
°
= 0 V
0.9
1
Figure 12. Typical Source-Drain Diode Forward Voltage
0.1
10
1
0.4
1. Duty factor D = t / t
2. Peak T = P
T = 150 C
Notes:
J
10
V
SD
0.5
,Source-to-Drain Voltage (V)
J
°
IRF7807A
DM
0.6
x Z
1
thJA
P
2
100
DM
0.7
+ T
A
t
1
www.irf.com
T = 25 C
J
t
2
V
0.8
GS
°
= 0 V
1000
0.9