IRF7807D1 International Rectifier, IRF7807D1 Datasheet - Page 5
![MOSFET N-CH 30V 8.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7807D1
Manufacturer Part Number
IRF7807D1
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7807D1.pdf
(8 pages)
Specifications of IRF7807D1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
www.irf.com
Fig 9. On-Resistance Vs. Gate Voltage
100
0.1
0.05
0.04
0.03
0.02
0.01
10
1
0.001
D = 0.50
2.0
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V GS, Gate -to -Source Voltage (V)
4.0
(THERMAL RESPONSE)
0.01
SINGLE PULSE
6.0
I D = 7.0A
t , Rectangular Pulse Duration (sec)
8.0
1
(
HEXFET
0.1
10.0
MOSFET
0.024
0.022
0.020
0.018
0.016
Fig 10. On-Resistance Vs. Drain Current
0
)
1
1. Duty factor D = t / t
2. Peak T = P
Notes:
VGS = 4.5V
20
I
D
J
, Drain Current (A)
IRF7807D1
DM
x Z
1
40
10
thJA
P
2
DM
VGS = 10V
+ T
A
t
1
60
t
2
100
5
80