IRL2203NS International Rectifier, IRL2203NS Datasheet

IRL2203NS

Manufacturer Part Number

IRL2203NS

Description

MOSFET N-CH 30V 116A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL2203NS.pdf (11 pages)

Specifications of IRL2203NS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

116A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 4.5V

Input Capacitance (ciss) @ Vds

3290pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRL2203NS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NS

Manufacturer:

341241-6

Quantity:

412

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NS

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NSPBF

Manufacturer:

Quantity:

21 600

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NSTRLPBF

Manufacturer:

Quantity:

19 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NSTRPBF

Manufacturer:

Quantity:

21 600

Company:

H&T Electronics

Part Number:

IRL2203NSTRPBF

Quantity:

12 002

Current page: 1 of 11
Download datasheet (233Kb)

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

die sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

is suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL2203NL) is available for low-profile applications.

Description

www.irf.com

dv/dt

Absolute Maximum Ratings

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

100% R

Symbol

Pak is a surface mount power package capable of accommodating

= 25°C

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

Tested

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount, steady state)

Power MOSFETs from International Rectifier

This benefit, combined with the fast

Ã™

Parameter

™

@ 10V

Pak

Typ

HEXFET

300 (1.6mm from case)

–––

-55 to + 175

IRL2203NS

116

Max

± 16

400

180

3.8

1.2

5.0

Pak

IRL2203NS

IRL2203NL

Power MOSFET

DS(on)

Max

0.85

DSS

= 116A‡

PD - 94394A

IRL2203NL

= 7.0mΩ

= 30V

TO-262

Units

W/°C

°C/W

V/ns

°C

Related parts for IRL2203NS

IRL2203NS Summary of contents

Page 1

... GS ™ ™ e Parameter 94394A IRL2203NS IRL2203NL ® HEXFET Power MOSFET 30V DSS R = 7.0mΩ DS(on 116A‡ Pak TO-262 IRL2203NS IRL2203NL Max Units i 116 82 A 400 3.8 W 180 W 1.2 W/°C ± 5.0 V/ns - 175 °C 300 (1.6mm from case) Typ Max Units – ...

Page 2

Electrical Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C ...

Page 5

LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V GS 0.01 Ω Charge 6 600 500 DRIVER 400 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 SEMBLY LINE "L" 8 INT ERNAT IONAL RECT IFIER F530S LOGO ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLEC- TOR 9 ...

Page 10

TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. This product has been designed and qualified for ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords

irl2203
irl2203n
irl2203ns
irl2203nl
irl2203npbf
IRL2203NS datasheet
IRL2203NS data sheet
IRL2203NS pdf datasheet
IRL2203NS component
IRL2203NS part
IRL2203NS distributor
IRL2203NS RoHS
IRL2203NS datasheet download