IRL3302S International Rectifier, IRL3302S Datasheet - Page 2

• Manufacturer Part Number: IRL3302S
• Description: MOSFET N-CH 20V 39A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3302S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 23A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRL3302S

IRL3302S
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
** When mounted on FR-4 board using minimum recommended footprint.
Notes:
R
V
DV
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
I
L
S
DSS
on
SM
GSS
d(on)
r
d(off)
f
rr
DS(on)
fs
S
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
GS(th)
g
gd
iss
oss
rss
SD
gs
rr
Repetitive rating; pulse width limited by
R
max. junction temperature.
Starting T
(BR)DSS
G
= 25W , I
/DT
J
J
AS
= 25°C, L = 0.49mH
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Forward Turn-On Time
Drain-to-Source Leakage Current
Internal Source Inductance
= 23A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Charge –––
T
I
Pulse width £ 300µs; duty cycle £ 2%.
0.70
Uses IRL3302 data and test conditions
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
–––
–––
–––
–––
20
21
–––
–––
J
£ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
£ 23A, di/dt £ 97A/µs, V
0.022 –––
1300 –––
–––
––– 0.023
––– 0.020
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
110
520
190
–––
–––
–––
7.5
7.2
41
89
62
–––
110
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
5.7
1.3
160
94
25
31
13
39
V/°C
160
µA
nA
nC
ns
pF
ns
nH
V
V
V
W
S
A
nC
V
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
and center of die contact
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
DD
Reference to 25°C, I
V
V
V
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 23A
= 23A
= 25°C, I
= 25°C, I
£ V
= 2.4W ,
= 9.5W , V
= V
= 10V, I
= 20V, V
= 10V, V
= 0V, I
= 4.5V, I
= 7.0V, I
= 10V
= 16V
= 4.5V, See Fig. 6
= 0V
= 15V
= -10V
= 10V
(BR)DSS
GS
di/dt = 100A/µs
, I
D
F
S
D
D
GS
= 23A
= 250µA
D
D
GS
= 23A, V
Conditions
,
GS
Conditions
= 250µA
= 23A
= 23A
= 23A
= 4.5V
= 0V, T
= 0V
D
GS
= 1mA
J
= 0V
= 150°C
G
S
+L
D
D
S
)