SI4435DY International Rectifier, SI4435DY Datasheet - Page 2
SI4435DY
Manufacturer Part Number
SI4435DY
Description
MOSFET P-CH 30V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.SI4435DYTR.pdf
(8 pages)
Specifications of SI4435DY
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2320pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*SI4435DY
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Manufacturer:
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Manufacturer:
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Quantity:
20 000
Company:
Part Number:
SI4435DY/PBF/TR/TRPBF
Manufacturer:
VISHAY
Quantity:
3 309
Source-Drain Ratings and Characteristics
Si4435DY
Electrical Characteristics @ T
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
SM
d(on)
d(off)
S
rr
I
r
f
DSS
V
fs
GSS
SD
2
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width
Repetitive rating; pulse width limited by
max. junction temperature.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– -0.019 –––
––– 0.015 0.020
––– 0.026 0.035
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2320 –––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t
–––
–––
–––
–––
––– -100
–––
130
390
270
–––
–––
–––
7.1
8.0
34
33
11
40
16
76
90
–––
100
-1.2
–––
–––
–––
–––
110
200
140
–––
–––
-10
-10
-2.5
50
60
24
-50
51
V/°C
µA
nA
nC
nC
ns
pF
ns
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
I
R
V
V
p-n junction diode.
di/dt = -100A/µs
V
V
V
R
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.6A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 15
= V
= -15V, I
= -24V, V
= -15V, V
= -15V
= -15V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
5sec.
D
Conditions
= -250µA
D
D
= -2.5A, V
= -2.5A
D
GS
GS
= -250µA
GS
= -8.0A
= -8.0A
= -5.0A
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
S
D