IRF7601TR International Rectifier, IRF7601TR Datasheet
IRF7601TR
Specifications of IRF7601TR
IRF7601
IRF7601CT
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IRF7601TR Summary of contents
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... Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF7601 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTT OM 1. µ LSE W IDTH 1 °C J 0.1 0 Drain-to-Source V oltage ( ...
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IRF7601 1200 iss 1000 ...
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Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . 3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...
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IRF7601 D.U Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...
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IRF7601 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches ...