IRLML2803TR International Rectifier, IRLML2803TR Datasheet - Page 6

• Manufacturer Part Number: IRLML2803TR
• Description: MOSFET N-CH 30V 1.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2803TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 910mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 85pF @ 25V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML2803TR; IRLML2803; IRLML2803; IRLML2803CT

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Fig 12a. Unclamped Inductive Test Circuit
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Fig 12b. Unclamped Inductive Waveforms
I
AS
‚
+
-
R G
20V
V
V DS
GS
t p
t p
I AS
ƒ
D.U.T
+
-
•
•
•
•
0.01 Ω
Fig 13.
L
SD
V
(BR)DSS
•
•
•
15V
G
-
„
DRIVER
HEXFET
+
-
+
V DD
A
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
18
16
14
12
10
Fig 12c. Maximum Avalanche Energy
8
6
4
2
0
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
25
P.W.
SD
DS
Starting T J , Junction Temperature (°C)
Waveform
Waveform
for N-Channel
50
vs. Drain Current
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
75
dv/dt
Forward Drop
di/dt
100
TOP
BOTTOM
D =
Period
P.W.
125
0.57A
0.75A
0.90A
I D
V
V
I
SD
GS
DD
150
=10V
6