IRFS33N15D International Rectifier, IRFS33N15D Datasheet - Page 2

• Manufacturer Part Number: IRFS33N15D
• Description: MOSFET N-CH 150V 33A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS33N15D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFS33N15D

Diode Characteristics
IRFB/IRFS/IRFSL33N15D
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
E
I
E
R
R
R
R
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
V
fs
2
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
JC
CS
JA
JA
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.18 –––
2020 –––
2440 –––
–––
–––
–––
–––
–––
––– -100
–––
400
180
320
––– 0.056
–––
–––
–––
150
920
60
17
27
13
38
23
21
91
130
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.5
1.3
25
90
26
41
33
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
–––
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
I
MOSFET symbol
integral reverse
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 20A
= 20A
= 25°C, I
= 25°C, I
= 3.6
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V,
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 20A, V
= 20A
= 250µA
= 20A
= 20A
GS
GS
= 0V to 120V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
0.90
330
–––
20
17
62
40
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 0V
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)