IRFR18N15D International Rectifier, IRFR18N15D Datasheet - Page 6
![MOSFET N-CH 150V 18A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR18N15D
Manufacturer Part Number
IRFR18N15D
Description
MOSFET N-CH 150V 18A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15D.pdf
(11 pages)
Specifications of IRFR18N15D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR18N15D
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR18N15DPBF
Manufacturer:
ST
Quantity:
101
Company:
Part Number:
IRFR18N15DTRR(94-231
Manufacturer:
IR
Quantity:
55 368
Company:
Part Number:
IRFR18N15DTRR(94-2314)
Manufacturer:
IR
Quantity:
55 368
IRFR18N15D/IRFU18N15D
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
A S
12V
V
V
G
GS
R G
2 0 V
Same Type as D.U.T.
V D S
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I A S
.3 F
D .U .T
0 .0 1
L
I
G
Q
Charge
Q
V
GD
G
(B R )D SS
D.U.T.
I
D
1 5 V
+
-
V
DS
D R IV E R
+
-
V D D
A
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
J
75
100
125
TOP
BOTTOM
www.irf.com
150
°
4.4A
9.0A
I D
11A
175