IRFU18N15D International Rectifier, IRFU18N15D Datasheet - Page 7
![MOSFET N-CH 150V 18A I-PAK](/photos/5/49/54916/21-i-pak_sml.jpg)
IRFU18N15D
Manufacturer Part Number
IRFU18N15D
Description
MOSFET N-CH 150V 18A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR18N15D.pdf
(11 pages)
Specifications of IRFU18N15D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU18N15D
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
IRFR18N15D/IRFU18N15D
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7