IRF7521D1 International Rectifier, IRF7521D1 Datasheet - Page 2

• Manufacturer Part Number: IRF7521D1
• Description: MOSFET N-CH 20V 2.4A MICRO-8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7521D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7521D1
MOSFET Electrical Characteristics @ T
MOSFET Source-Drain Ratings and Characteristics
Schottky Diode Maximum Ratings
Schottky Diode Electrical Specifications
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
I
I
R
V
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
V
I
C
dv/dt
F(av)
SM
DSS
SM
GSS
d(on)
r
d(off)
f
S
rr
RM
fs
(BR)DSS
DS(on)
GS(th)
SD
FM
iss
oss
rss
t
g
gs
gd
rr
2
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Static Drain-to-Source On-Resistance
Continuous Source Current(Body Diode) –––
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Max. Forward voltage drop
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Parameter
Parameter
Parameter
Parameter
Max. Units.
3600 V/ µs
Max. Units
Min. Typ. Max. Units
0.70 –––
Min. Typ. Max. Units
120
0.62
0.57
0.02
0.50
0.39
––– 0.085 0.135
––– 0.12 0.20
–––
–––
–––
–––
––– 0.84
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.9
1.4
2.6
11
20
92
J
8
= 25°C (unless otherwise specified)
mA
–––
–––
–––
–––
–––
––– -100
260
130
–––
–––
–––
5.3
2.2
5.7
24
15
16
61
39
37
pF
A
V
A
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.0
8.0
1.3
3.3
1.3
1.2
25
14
59
56
See
50% Duty Cycle. Rectangular Wave, T
5µs sine or 3µs Rect. pulse
10ms sine or 6ms Rect. pulse load condition &
I
I
I
I
V
V
Rated V
F
F
F
F
R
R
= 1.0A, T
= 2.0A, T
= 1.0A, T
= 2.0A, T
= 5Vdc ( 100kHz to 1 MHz) 25°C
= 20V
Fig.14
nA
µA
nC
ns
pF
nC
ns
V
V
S
A
V
R
J
J
J
J
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
T
T
di/dt = 100A/µs
Conditions
= 25°C
= 25°C
= 125°C
= 125°C .
D
D
T
T
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 25°C
= 125°C
= 6.0
= 5.7 ,
Conditions
= V
= 10V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 12V
= -12V
= 4.5V, See Fig. 6
= 10V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
= 250µA
D
D
GS
GS
= 1.7A, V
= 1.7A
= 250µA
= 0.85A
= 1.7A
= 0.85A
= 0V
= 0V, T
Following any rated
with V
www.irf.com
T
GS
J
A
A
= 125°C
RRM
= 70°C
= 0V
= 25°C
applied
2